Systematic and rigorous extraction method of HBT small-signal model parameters

被引：27
作者：
Degachi, L [1 ]
Ghannouchi, FM
机构：
[1] Ecole Polytech, Poly Grames Res Ctr, Dept Elect Engn, Montreal, PQ H3C 3A7, Canada
[2] Univ Calgary, Schulich Sch Engn, Elect & Comp Engineer Dept, Calgary, AB T2N 1N4, Canada
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2006年 / 54卷 / 02期
关键词：
heterojunction bipolar transistor (HBT); parameter extraction; small-signal equivalent-circuit model;
D O I：
10.1109/TMTT.2005.862661
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a systematic and rigorous analytical parameter-extraction method for a heterojunction bipolar transistor (HBT) small-signal equivalent-circuit model. The proposed method relies exclusively on S-parameter measurements. Exact closed-form equations are used for the direct extraction of circuit elements. The method is characterized by its simplicity and ease of implementation. It is applied to predict the small-signal characteristics of transistors from different foundries. Excellent agreement between modeled and measured S-parameters is observed up to 20 GHz.
引用
收藏
页码：682 / 688
页数：7
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