Study of Photoluminescence in SiNx and SiNxOy Films Deposited by Reactive Sputtering

被引：0

作者：

Sombrio, G. ^{[1
,2
]}

Franzen, P. ^{[1
]}

Maltez, R. ^{[2
]}

Boudinov, H. ^{[1
,2
]}

机构：

[1] Univ Fed Rio Grande do Sul, PGMicro, Porto Alegre, RS, Brazil

[2] Univ Fed Rio Grande do Sul, Inst Fisica, Porto Alegre, RS, Brazil

来源：

2013 28TH SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO 2013) | 2013年

关键词：

optoelectronics; photoluminescence; reactive sputtering; silicon nanocrystas; SILICON-NITRIDE; NANOCRYSTALS; EMISSION;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Non-stoichiometric silicon oxy-nitride films were deposited by reactive sputtering. The compositions were obtained quantitatively by Rutherford Backscattering Spectroscopy. After deposition, the samples were thermally treated to activate the radiative transitions centers. The photoluminescence emission of the samples was measured using 266 nm and 488 nm lasers for excitation source. Transmission electron microscopy measurements show the presence of alpha-Si3N4, beta-Si3N4 and Si2N2O crystalline structures. The photoluminescence emission was predominantly from localized levels related to defect sites. An ultraviolet band (3.8 +/- 0.1 eV) was observed in the emission from the samples with higher oxygen concentration. The photoluminescence intensity as a function of the laser power is shown.

引用

页数：4

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