Robustness of SiC JFET in Short-Circuit Modes

被引：29

作者：

Boughrara, Narjes ^{[1
,2
]}

Moumen, Sabrine ^{[3
]}

Lefebvre, Stephane ^{[4
]}

Khatir, Zoubir ^{[3
]}

Friedrichs, Peter ^{[5
]}

Faugieres, Jean-Claude ^{[4
]}

机构：

[1] Ecole Normale Super, SATIE Lab, F-94235 Cachan, France

[2] Univ Skikda, Dept Electromecan, Skikda 21000, Algeria

[3] Inst Natl Rech Transports & Leur Securite, F-94114 Arcueil, France

[4] Conservatoire Natl Arts & Metiers, F-75003 Paris, France

[5] SiCED, D-91050 Erlangen, Germany

来源：

IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 01期

关键词：

JFETs; short-circuit current; silicon carbide;

D O I：

10.1109/LED.2008.2008668

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter presents first destructive results showing the robustness of SiC JFET transistors from SiCED in current limitation regime or short-circuit operation. Crystal temperature during failure was estimated after different electrical characterizations and using appropriate models of saturation current. This letter shows the exceptional robustness of SiC JFET transistors in current Imitation mode compared to Si devices (MOSFETS and IGBTs).

引用

页码：51 / 53

页数：3

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