Dynamics of excited states in GaN

被引：17

作者：

Hoffmann, A

机构：

[1] Inst. Festkorperphysik der TU Berlin, 10623 Berlin

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1997年 / 43卷 / 1-3期

关键词：

GaN epilayers; photoluminescence; optical gain mechanism;

D O I：

10.1016/S0921-5107(96)01860-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report a review of the optical properties of GaN epilayers. Photoluminescence, time-resolved and photoluminescence excitation measurements on hexagonal and cubic GaN heterostructures from the band edge region down to the near infrared spectral region provide information about excitonic properties as well as the influence of point and extended defects. Spatially resolved Raman-scattering and photoluminescence experiments allow to analyze the crystal structure, layer orientation and strain contribution to the lattice properties. Luminescence measurements at high excitation densities will be presented giving information about optical gain mechanisms. (C) 1997 Elsevier Science S.A.

引用

页码：185 / 191

页数：7

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