a-Si:H Thin Films Deposited at Low Temperature by Sputtering

被引：0
|
作者：
Nunes, C. C. P. [1 ]
Zambom, L. S. [2 ]
Mansano, R. D. [1 ]
机构：
[1] EPUSP, PSI, Lab Sistemas Integraveis, BR-05508010 Sao Paulo, Brazil
[2] Faculdade Tecnologia Sao Paulo, Dept Mat, Processos Componentes Eletrnicos, BR-01124 Sao Paulo, Brazil
来源：
MICROELECTRONICS TECHNOLOGY AND DEVICES - SBMICRO 2010 | 2010年 / 31卷 / 01期
关键词：
HYDROGENATED AMORPHOUS-SILICON; TRANSISTORS; GERMANIUM; IMPURITY;
D O I：
10.1149/1.3474151
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
a-Si:H thin films were deposited by reactive sputtering so that different hydrogen and argon plasma concentration were used as well as two power and two total pressure conditions. The film characterization, by RBS and FTIR, enabled the identification and quantization of the incorporated species in the film. The hydrogen content found was related with the dark conductivity and optical absorption for the determination of the best deposition conditions for thin film transistor fabrication.
引用
收藏
页码：135 / 142
页数：8
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