a-Si:H Thin Films Deposited at Low Temperature by Sputtering

被引：0
|
作者：
Nunes, C. C. P. [1 ]
Zambom, L. S. [2 ]
Mansano, R. D. [1 ]
机构：
[1] EPUSP, PSI, Lab Sistemas Integraveis, BR-05508010 Sao Paulo, Brazil
[2] Faculdade Tecnologia Sao Paulo, Dept Mat, Processos Componentes Eletrnicos, BR-01124 Sao Paulo, Brazil
来源：
MICROELECTRONICS TECHNOLOGY AND DEVICES - SBMICRO 2010 | 2010年 / 31卷 / 01期
关键词：
HYDROGENATED AMORPHOUS-SILICON; TRANSISTORS; GERMANIUM; IMPURITY;
D O I：
10.1149/1.3474151
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
a-Si:H thin films were deposited by reactive sputtering so that different hydrogen and argon plasma concentration were used as well as two power and two total pressure conditions. The film characterization, by RBS and FTIR, enabled the identification and quantization of the incorporated species in the film. The hydrogen content found was related with the dark conductivity and optical absorption for the determination of the best deposition conditions for thin film transistor fabrication.
引用
收藏
页码：135 / 142
页数：8
相关论文
共 50 条
  • [31] Solid-source doping of a-Si:H thin films deposited with a remote hydrogen plasma
    Johnson, N.M., 1600, (114):
  • [32] Manufacturing and photoelectrical properties of P-doped a-Si:H thin films deposited by PECVD
    Liao, Naiman
    Li, Wei
    Jiang, Yadong
    Qi, Kangcheng
    Wu, Zhiming
    Li, Shibin
    ADVANCED OPTICAL MANUFACTURING TECHNOLOGIES, PTS 1 AND 2, 2007, 6722 : 72219 - 72219
  • [33] EXPANDING THERMAL PLASMA DEPOSITED a-Si:H THIN FILMS FOR SURFACE PASSIVATION OF c-Si WAFERS
    Illiberi, A.
    Sharma, K.
    Creatore, M.
    Kessels, W. M. M.
    van de Sanden, M. C. M.
    35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, 2010, : 637 - 639
  • [34] Visible photoluminescence from porous a-Si:H and porous a-Si:C:H thin films
    Estes, MJ
    Hirsch, LR
    Wichart, S
    Moddel, G
    Williamson, DL
    JOURNAL OF APPLIED PHYSICS, 1997, 82 (04) : 1832 - 1840
  • [35] Influence of substrate temperature on growth of a-Si:H films by reactive facing target sputtering deposition
    Wei Yu
    LingHai Meng
    Jing Yuan
    HaiJiang Lu
    ShuJie Wu
    GuangSheng Fu
    Science China Physics, Mechanics and Astronomy, 2010, 53 : 807 - 811
  • [36] Influence of substrate temperature on growth of a-Si:H films by reactive facing target sputtering deposition
    Yu Wei
    Meng LingHai
    Yuan Jing
    Lu HaiJiang
    Wu ShuJie
    Fu GuangSheng
    SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2010, 53 (05) : 807 - 811
  • [37] Structural changes in a-Si:H films deposited on the edge of crystallinity
    National Renewable Energy Laboratory, Golden, CO 80401, United States
    Materials Research Society Symposium - Proceedings, 1999, 557 : 269 - 274
  • [38] Influence of substrate temperature on growth of a-Si:H films by reactive facing target sputtering deposition
    YU Wei
    Science China(Physics,Mechanics & Astronomy), 2010, (05) : 807 - 811
  • [39] Structural changes in a-Si:H films deposited on the edge of crystallinity
    Mahan, AH
    Yang, J
    Guha, S
    Williamson, DL
    AMORPHOUS AND HETEROGENEOUS SILICON THIN FILMS: FUNDAMENTALS TO DEVICES-1999, 1999, 557 : 269 - 274
  • [40] Annealing treatment of a-Si: H films deposited by PECVD and their properties
    Cahyono, Yoyok
    Muttaqin, Fuad Darul
    Maslakah, Umi
    Darminto
    3RD INTERNATIONAL CONFERENCE ON FUNCTIONAL MATERIALS SCIENCE 2016, 2017, 196
12345