ZnO-based low voltage inverter with low-k/high-k double polymer dielectric layer

被引：14

作者：

Lee, Kimoon ^{[1
]}

Kim, Ki-tae ^{[1
]}

Lee, Kwang H. ^{[1
]}

Lee, Gyubaek ^{[1
]}

Oh, Min Suk ^{[1
]}

Choi, Jeong-M. ^{[1
]}

Im, Seongil ^{[1
]}

Jang, Sungjin ^{[2
]}

Kim, Eugene ^{[2
]}

机构：

[1] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea

[2] Hongik Univ, Dept Informat & Display, Seoul 121791, South Korea

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 19期

关键词：

high-k dielectric thin films; II-VI semiconductors; low-k dielectric thin films; polymers; semiconductor thin films; thin film transistors; wide band gap semiconductors; zinc compounds;

D O I：

10.1063/1.3028093

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the fabrication of ZnO-based depletion-load-type inverter composed of two n-channel ZnO thin-film transistors (TFTs) with a low-k poly-4-vinylphenol and high-k poly(vinylidene fluoride-trifluoroethylene) double polymer dielectric. One of the two ZnO channels in the inverter was illuminated by 352 nm wavelength ultraviolet so that the illuminated ZnO channel might be depleted. That ZnO-TFT plays as a driver transistor in the inverter set where the original TFT is used as a load one. The both TFTs show the same mobility of similar to 0.3 cm(2)/V s and our inverter operates with a voltage gain of similar to 4 at low supplied voltages (5-7 V), demonstrating a dynamic response of similar to 20 ms.

引用

页数：3

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