Ion-Sensitive Field-Effect Transistors With Periodic-Groove Channels Fabricated Using Nanoimprint Lithography

被引：10

作者：

Chen, Henry J. H. ^{[1
]}

Chen, Chih-Yun ^{[1
]}

机构：

[1] Natl Chi Nan Univ, Dept Elect Engn, Nantou 545, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 04期

关键词：

Ion-selective field-effect transistors (ISFETs); nanoimprint; periodic groove;

D O I：

10.1109/LED.2013.2245624

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter addresses the characteristic of ion-selective field-effect transistors (ISFETs) with periodic-groove channels. The channels with the groove width/space about 1:1, 200/200 nm, were fabricated by ultraviolet nanoimprint lithography. The proposed ISFETs exhibited higher sensitivity, lower hysteresis, and lower drift characteristics than single channel. The nanoscale corners of periodic grooves can improve the surface potential response to the ion concentration. With this approach, high-performance ISFETs can be fabricated for future biosensor applications.

引用

页码：541 / 543

页数：3

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