Effects of germanium and nitrogen incorporation on crystallization of N-doped Ge2+xSb2Te5 (x=0,1) thin films for phase-change memory

被引：13

作者：

Cheng, Limin ^{[1
,2
]}

Wu, Liangcai ^{[1
]}

Song, Zhitang ^{[1
]}

Rao, Feng ^{[1
]}

Peng, Cheng ^{[1
]}

Yao, Dongning ^{[1
]}

Liu, Bo ^{[1
]}

Xu, Ling ^{[3
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 10080, Peoples R China

[3] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 113卷 / 04期

基金：

中国国家自然科学基金;

关键词：

High resolution transmission electron microscopy - Tellurium compounds - Amorphous films - Microstructure - Optical band gaps - X ray photoelectron spectroscopy - Energy gap - Germanium compounds - Antimony compounds - Thin films - Crystalline materials - Nitrogen compounds - Doping (additives) - Nitrogen - X ray diffraction;

D O I：

10.1063/1.4789388

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The phase-change behavior and microstructure changes of N-doped Ge3Sb2Te5 [N-GST(3/2/5)] and Ge2Sb2Te5 [GST(2/2/5)] films during the phase transition from an amorphous to a crystalline phase were studied using in situ temperature-dependent sheet resistance measurements, X-ray diffraction, and transmission electron microscopy. The optical band gaps of N-GST(3/2/5) films are higher than that of GST(2/2/5) film in both the amorphous and face-centered-cubic (fcc) phases. Ge nitride formation by X-ray photoelectron spectroscopy analysis increased the optical band gap and suppressed crystalline grain growth, resulting in an increase in the crystallization temperature and resistance in the fcc phase. As a result, the Ge- and N-doped GST(2/2/5) composite films can be considered as a promising material for phase-change memory application because of improved thermal stability and reduced power consumption. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4789388]

引用

页数：5

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