Magnetic and magnetotransport properties in Cu and Fe co-doped bulk In2O3 and ITO

被引：18

作者：

Ho, H. W. ^{[1
]}

Zhao, B. C. ^{[1
]}

Xia, B. ^{[1
]}

Huang, S. L. ^{[1
]}

Tao, J. G. ^{[1
]}

Huan, A. C. H. ^{[1
]}

Wang, L. ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Math & Phys Sci, Div Phys & Appl Phys, Singapore 637371, Singapore

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2008年 / 20卷 / 47期

关键词：

D O I：

10.1088/0953-8984/20/47/475204

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A systematic study of structural, magnetic, and transport properties was performed on (In0.85-xFe0.15Cux)(2)O-3 (IFCO) and (In0.80-xSn0.05Fe0.15Cux)(2)O-3 (ISFCO) compounds with x = 0, 0.02, and 0.05. All the studied samples show clear room temperature ferromagnetism and the saturated magnetic moment decreases monotonically with increasing Cu-doping content. Detailed analysis based on the magnetic measurement rules out the ferromagnetism due to Fe3O4 and CuFe2O4 impurities. A crossover from semiconducting to metallic transport behavior is observed in IFCO samples, whereas only semiconducting behavior is detected in ISFCO. Low temperature resistivity decreases monotonically with increasing Cu-doping level due to the increasing electron concentration. Positive magnetoresistance is observed in IFCO, which also shows an anomalous Hall effect at 5 and 300 K. No magnetoresistance or AHE is found in ISFCO compounds. All the electric transport measurement results can be clarified by a two-channel transport model.

引用

页数：6

共 30 条

[1] Spin-related magnetoresistance of n-type ZnO:Al and Zn1-xMnxO:Al thin films -: art. no. 121309 [J].

Andrearczyk, T ;

Jaroszynski, J ;

Grabecki, G ;

Dietl, T ;

Fukumura, T ;

Kawasaki, M .

PHYSICAL REVIEW B, 2005, 72 (12)

[2] Magnetic properties of bulk Fe-doped indium oxide [J].

Berardan, David ;

Guilmeau, Emmanuel .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2007, 19 (23)

[3] Ferromagnetism in Fe-doped SnO2 thin films [J].

Coey, JMD ;

Douvalis, AP ;

Fitzgerald, CB ;

Venkatesan, M .

APPLIED PHYSICS LETTERS, 2004, 84 (08) :1332-1334

[4] Colossal magnetoresistant materials: The key role of phase separation [J].

Dagotto, E ;

Hotta, T ;

Moreo, A .

PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 2001, 344 (1-3) :1-153

[5] Origin of ferromagnetism in Zn1-xCoxO from magnetization and spin-dependent magnetoresistance measurements [J].

Dietl, T. ;

Andrearczyk, T. ;

Lipinska, A. ;

Kiecana, M. ;

Tay, Maureen ;

Wu, Yihong .

PHYSICAL REVIEW B, 2007, 76 (15)

[6] Zener model description of ferromagnetism in zinc-blende magnetic semiconductors [J].

Dietl, T ;

Ohno, H ;

Matsukura, F ;

Cibert, J ;

Ferrand, D .

SCIENCE, 2000, 287 (5455) :1019-1022

[7] Electrical and optical properties of thin films consisting of tin-doped indium oxide nanoparticles -: art. no. 155410 [J].

Ederth, J ;

Johnsson, P ;

Niklasson, GA ;

Hoel, A ;

Hultåker, A ;

Heszler, P ;

Granqvist, CG ;

van Doorn, AR ;

Jongerius, MJ ;

Burgard, D .

PHYSICAL REVIEW B, 2003, 68 (15)

[8] Magnetic oxide semiconductors [J].

Fukumura, T ;

Toyosaki, H ;

Yamada, Y .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 20 (04) :S103-S111

[9] An oxide-diluted magnetic semiconductor: Mn-doped ZnO [J].

Fukumura, T ;

Jin, ZW ;

Ohtomo, A ;

Koinuma, H ;

Kawasaki, M .

APPLIED PHYSICS LETTERS, 1999, 75 (21) :3366-3368

[10] A key to room-temperature ferromagnetism in Fe-doped ZnO: Cu [J].

Han, SJ ;

Song, JW ;

Yang, CH ;

Park, SH ;

Park, JH ;

Jeong, YH ;

Rhie, KW .

APPLIED PHYSICS LETTERS, 2002, 81 (22) :4212-4214

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