Optical Properties of a-SiGe:H Thin Film Transistor for Infrared Image Sensors in Touch Sensing Display

被引：14

作者：

Han, Sang Youn ^{[1
]}

Park, Kyung Tea ^{[1
]}

Jeon, Ho Sik ^{[2
]}

Heo, Yang Wook ^{[2
]}

Bae, Byung Seong ^{[2
]}

机构：

[1] LCD R&D Ctr, Yongin 446711, Gyeongki Do, South Korea

[2] Hoseo Univ, Dept Semicond & Display Engn, Asan 336795, Choongchungnam, South Korea

来源：

JOURNAL OF DISPLAY TECHNOLOGY | 2012年 / 8卷 / 10期

关键词：

Amorphous SiGe; infrared (IR) detector; photo-sensor; thin-film transistor (TFT); HIGH-PERFORMANCE; PHOTODETECTORS;

D O I：

10.1109/JDT.2012.2209171

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the effects of monochromatic illumination on the electrical performance of a-SiGe:H thin-film transistor (TFT) and the use of this device as infrared (IR) image-sensing touch displays. In order to reduce the inevitable incidence of visible light into device, the visible cutting layer was designed, which played a critical role in reducing the optical noise from visible light. When the photo response was observed in real liquid crystal display (LCD) operation environment, it showed the display contents dependence, meaning that the supply of external IR light source for the touch sensing would be effective independent of any ambient light condition. Additionally, the optical noise from the display operation was eliminated using the block operation as well as the backlight IR light-emitting diode (LED) light modulation. From these, the clear touch images were successfully obtained in the a-SiGe:H photosensor embedded LCD panel.

引用

页码：617 / 622

页数：6

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