Optimization of SEU Simulations for SRAM Cells Reliability under Radiation

被引：0

作者：

Castellani-Coulie, K. ^{[1
]}

Aziza, H. ^{[1
]}

Micolau, G. ^{[1
]}

Portal, J-M. ^{[1
]}

机构：

[1] Univ Aix Marseille, IM2NP, UMR CNRS 6242, F-13451 Marseille 20, France

来源：

JOURNAL OF ELECTRONIC TESTING-THEORY AND APPLICATIONS | 2012年 / 28卷 / 03期

关键词：

SEUcriteria; Single event upset; SRAM; TCAD simulation; SPICE simulation; SER;

D O I：

10.1007/s10836-012-5281-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simplified RC circuit is used to simulate effects of ionizing particles in a 90 nm SRAM. The main characteristics of the memory cell bit flip are discussed and a SEU criterion is presented. The effect of the surrounded circuit on the struck transistor is also discussed in order to extract parameters characteristic of the SEU occurrence.

引用

页码：331 / 338

页数：8

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