Strain Dynamics of Ultrathin VO2 Film Grown on TiO2 (001) and the Associated Phase Transition Modulation

被引：254

作者：

Fan, L. L. ^{[1
]}

Chen, S. ^{[1
]}

Luo, Z. L. ^{[1
]}

Liu, Q. H. ^{[1
]}

Wu, Y. F. ^{[1
]}

Song, L. ^{[1
]}

Ji, D. X. ^{[3
]}

Wang, P. ^{[3
]}

Chu, W. S. ^{[1
]}

Gao, C. ^{[1
]}

Zou, C. W. ^{[1
]}

Wu, Z. Y. ^{[1
,2
]}

机构：

[1] Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Peoples R China

[2] Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China

[3] Nanjing Univ, Dept Mat Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China

来源：

NANO LETTERS | 2014年 / 14卷 / 07期

基金：

中国国家自然科学基金;

关键词：

VO2; metal insulator transition; ultrathin films; synchrotron radiation; X-ray diffraction; METAL-INSULATOR-TRANSITION; VANADIUM DIOXIDE; ORBITAL OCCUPANCY; THIN-FILMS; STABILIZATION; NANOBEAMS;

D O I：

10.1021/nl501480f

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Tuning the metal insulator transition (MIT) behavior of VO2 film through the interfacial strain is effective for practical applications. However, the mechanism for strain-modulated MIT is still under debate. Here we directly record the strain dynamics of ultrathin VO2 film on TiO2 substrate and reveal the intrinsic modulation process by means of synchrotron radiation and first-principles calculations. It is observed that the MIT process of the obtained VO2 films can be modulated continuously via the interfacial strain. The relationship between the phase transition temperature and the strain evolution is established from the initial film growth. From the interfacial strain dynamics and theoretical calculations, we claim that the electronic orbital occupancy is strongly affected by the interfacial strain, which changes also the electron electron correlation and controls the phase transition temperature. These findings open the possibility of an active tuning of phase transition for the thin VO2 film through the interfacial lattice engineering.

引用

页码：4036 / 4043

页数：8

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