Analytical model for threshold voltage of double gate bilayer graphene field effect transistors

被引：8

作者：

Saeidmanesh, M. ^{[1
]}

Rahmani, M. ^{[1
]}

Karimi, H. ^{[2
]}

Khaledian, M. ^{[1
]}

Ismail, Razali ^{[1
]}

机构：

[1] Univ Teknol Malaysia UTM, Fac Elect Engn, Johor Baharu 81310, Johor, Malaysia

[2] Univ Teknol Malaysia UTM, Malaysia Japan Int Inst Technol, Johor Baharu 81310, Malaysia

来源：

MICROELECTRONICS RELIABILITY | 2014年 / 54卷 / 01期

关键词：

SOI;

D O I：

10.1016/j.microrel.2013.08.003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new model for threshold voltage of double-gate Bilayer Graphene Field Effect Transistors (BLG-FETs) is presented in this paper. The modeling starts with deriving surface potential and the threshold voltage was modeled by calculating the minimum surface potential along the channel. The effect of quantum capacitance was taken into account in the potential distribution model. For the purpose of verification, FlexPDE 3D Poisson solver was employed. Comparison of theoretical and simulation results shows a good agreement. Using the proposed model, the effect of several structural parameters i.e. oxide thickness, quantum capacitance, drain voltage, channel length and doping concentration on the threshold voltage and surface potential was comprehensively studied. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：44 / 48

页数：5

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