RELAXATION-TIME LIMIT IN THE ISOTHERMAL HYDRODYNAMIC MODEL FOR SEMICONDUCTORS

被引：18

作者：

Xu, Jiang ^{[1
]}

机构：

[1] Nanjing Univ Aeronaut & Astronaut, Dept Math, Nanjing 211100, Peoples R China

来源：

SIAM JOURNAL ON MATHEMATICAL ANALYSIS | 2008年 / 40卷 / 05期

关键词：

relaxation-time limit; isothermal hydrodynamic model; semiconductors;

D O I：

10.1137/080721893

中图分类号：

O29 [应用数学];

学科分类号：

070104 ;

摘要：

This work is concerned with the relaxation-time limit in the multidimensional isothermal hydrodynamic model for semiconductors in the critical Besov space. As the initial data are sufficiently close to equilibrium, the uniform ( global) classical solutions are constructed by the high-and low-frequency decomposition methods. Furthermore, it is shown that the scaled classical solutions strongly converge towards that of a drift-diffusion model, as the relaxation time tends to zero.

引用

页码：1979 / 1991

页数：13

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