Passivation of In0.53Ga0.47As/ZrO2 interfaces by AlN atomic layer deposition process

被引：12

作者：

Weiland, C. ^{[1
]}

Rumaiz, A. K. ^{[2
]}

Price, J. ^{[3
]}

Lysaght, P. ^{[3
]}

Woick, J. C. ^{[1
]}

机构：

[1] NIST, Gaithersburg, MD 20899 USA

[2] Brookhaven Natl Lab, Natl Synchrotron Light Source, Upton, NY 11973 USA

[3] SEMATECH, Albany, NY 12203 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 114卷 / 03期

关键词：

SURFACE PASSIVATION; SEMICONDUCTORS; OXIDATION; AL2O3; GAAS; XPS;

D O I：

10.1063/1.4815934

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Reducing defects at III-V/high-k interfaces is essential for optimizing devices built on these materials. Here, the role of an interfacial AlN process at In0.53Ga0.47As/ZrO2 interfaces is investigated by hard x-ray photoelectron spectroscopy (HAXPES) and capacitance/voltage (C-V) measurements. C-V measurements show a significant reduction in the density of interface traps with the interfacial AlN process and a capping TiN layer. To elucidate the specific role of the AlN process, blanket films with various deposition processes are compared. The AlN process alone (without subsequent dielectric deposition) reduces InGaAs oxide levels below the HAXPES detection limit, even though the AlN is ultimately found to be oxidized into AlOx with only trace N incorporation, yet AlN passivation provides a lower D-it (density of interface traps) when compared with an H2O-based Al2O3 deposition. The AlN process does not passivate against re-oxidation of the InGaAs during an O-3 based ZrO2 deposition process, but it does provide passivation against As-As development during subsequent TiN deposition. The role of chemical defects in the C-V characteristics is also discussed. (C) 2013 AIP Publishing LLC.

引用

页数：8