Modulation-doped InGaAlAs/InP semiconductor optical amplifier structures grown by molecular beam epitaxy

被引：2
|
作者：
Feng, DJ [1 ]
Chiu, CL [1 ]
Lin, EY [1 ]
Lay, TS [1 ]
Cang, TY [1 ]
机构：
[1] Natl Sun Yat Sen Univ, Inst Electroopt Engn, Kaohsiung 804, Taiwan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 4A期
关键词：
SOA; multiple quantum wells; modulation doping; refractive index; electro-absorption;
D O I：
10.1143/JJAP.45.2426
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Semiconductor optical amplifier (SOA) structures have been designed and grown by molecular beam epitaxy for multifunctional integration of 1.55-mu m photonic devices on InP. Triple n-type modulation-doped, strain-balanced compact quantum wells (QWs) are designed to provide desirable gain characteristics under forward bias and clean index changes under reverse bias. The largest refractive index changes with low levels of electroabsorption have been obtained for a sample with modulation doping of 4.27 x 10(11) cm(-2) per QW and with a hole-stopping barrier.
引用
收藏
页码：2426 / 2429
页数：4
相关论文
共 12 条
  • [1] Optical properties of p-type modulation-doped InAs quantum dot structures grown by molecular beam epitaxy
    Kumagai, N.
    Watanabe, K.
    Nakata, Y.
    Arakawa, Y.
    JOURNAL OF CRYSTAL GROWTH, 2007, 301 (SPEC. ISS.) : 805 - 808
  • [2] Strained GaInAsP/InP multiple quantum well structures grown by solid source molecular beam epitaxy
    Sun, L
    Zhang, DH
    JOURNAL OF CRYSTAL GROWTH, 2002, 245 (1-2) : 9 - 14
  • [3] Spatially indirect radiative recombination in InAlAsSb grown lattice-matched to InP by molecular beam epitaxy
    Hirst, Louise C.
    Lumb, Matthew P.
    Abell, Josh
    Ellis, Chase T.
    Tischler, Joseph G.
    Vurgaftman, Igor
    Meyer, Jerry R.
    Walters, Robert J.
    Gonzalez, Maria
    JOURNAL OF APPLIED PHYSICS, 2015, 117 (21)
  • [4] Molecular beam epitaxial growth of Al-doped ZnMgO alloy films for modulation-doped ZnO/ZnMgO heterostructures
    Koike, K
    Hama, K
    Nakashima, I
    Sasa, S
    Inoue, M
    Yano, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (6A): : 3822 - 3827
  • [5] 1.3 μm InAsP p-type modulation doped MQW lasers grown by gas-source molecular-beam epitaxy
    Shimizu, H
    Kumada, K
    Yamanaka, N
    Iwai, N
    Mukaihara, T
    Kasukawa, A
    JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 896 - 900
  • [6] Surface photo-voltage characterization of GaAs/AlGaAs single quantum well laser structures grown by molecular beam epitaxy
    Muralidharan, R.
    Ramesh, V.
    Mishra, Puspashree
    Srinivasan, T.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2014, 29 (03)
  • [7] Doping effects on P-type InGaAs/AlGaAs quantum well structures for infrared photodetectors grown by molecular beam epitaxy
    Zhang, DH
    Shi, W
    Zhang, PH
    Yoon, SF
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (4A): : L360 - L362
  • [8] HIGH HOLE MOBILITY IN MODULATION-DOPED AND STRAIN-CONTROLLED PARA-SI0.5GE0.5/GE/SI1-XSGEXS HETEROSTRUCTURES FABRICATED USING MOLECULAR-BEAM EPITAXY
    MURAKAMI, E
    ETOH, H
    NAKAGAWA, K
    MIYAO, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (07): : L1059 - L1061
  • [9] Optically Pumped Terahertz Amplitude Modulation in Type-II Ge QD/Si Heterostructures Grown via Molecular Beam Epitaxy
    Ghosh, Suprovat
    Mukherjee, Abir
    Singh, Sudarshan
    Ray, Samit K.
    Basu, Ananjan
    Manna, Santanu
    Das, Samaresh
    ACS APPLIED OPTICAL MATERIALS, 2024, 2 (10): : 2085 - 2091
  • [10] Structural and optical properties of AlxInyGa1-x-yN quaternary alloys grown on sapphire substrates by molecular beam epitaxy
    Abid, M. A.
    Abu Hassan, H.
    Hassan, Z.
    Ng, S. S.
    Bakhori, S. K. Mohd
    Abd Raof, N. H.
    MICROELECTRONICS INTERNATIONAL, 2010, 27 (03) : 148 - 153
12