OMVPE of InAs quantum dots on an InGaP surface

被引：9
|
作者：
Forbes, David V. [1 ]
Podell, A. M. [1 ]
Slocum, M. A. [1 ]
Polly, S. J. [1 ]
Hubbard, S. M. [1 ]
机构：
[1] Rochester Inst Technol, NanoPower Res Lab, Rochester, NY 14623 USA
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2013年 / 16卷 / 04期
关键词：
InAs; Quantum dots; Epitaxy; VAPOR-PHASE EPITAXY; SOLAR-CELLS; OPTICAL-PROPERTIES; GROWTH; INTERRUPTIONS; EFFICIENCY; GAINP;
D O I：
10.1016/j.mssp.2013.02.011
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The organometallic vapor phase epitaxy of InAs quantum dots has been investigated by comparing the effect the underlying surface has on the quantum dot physical characteristics. Atomic force microscopy measurements were used to identify the InAs QDs coalesce to significantly larger size when deposited on an InGaP surface compared to a GaAs surface. Quantitative assessment of the total QD volume on different surfaces such as GaAs, InGaP, and GaAsP implicates the role of indium in the underlying surface for the increase in QD size on InGaP surfaces. (C) 2013 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1148 / 1153
页数：6
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