In situ, atomic force microscope studies of the evolution of InAs three-dimensional islands on GaAs(001)

被引：199

作者：

Kobayashi, NP ^{[1
]}

Ramachandran, TR ^{[1
]}

Chen, P ^{[1
]}

Madhukar, A ^{[1
]}

机构：

[1] UNIV SO CALIF,DEPT PHYS,PHOTON MAT & DEVICES LAB,LOS ANGELES,CA 90089

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 23期

关键词：

D O I：

10.1063/1.116580

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The size evolution of molecular beam epitaxy-grown strained InAs three-dimensional (3D) islands on GaAs(001) is examined using in situ ultrahigh vacuum atomic force microscopy. Remarkably, just after the initiation of well-formed 3D islands at similar to 1.57 ML InAs deposition, the lateral size dispersion and average value are found to first increase drastically with the smallest amount (similar to 0.05 ML) of additional InAs deposition and then decrease and saturate, indicating the onset of a natural tendency for size equalization, including through loss of material from the initially formed largest islands. These observations are found to be consistent with the previously suggested island-separation dependent influence of the evolving island-induced substrate strain fields on the adatom migration and incorporation/detachment kinetics that control the evolution of the islands. (C) 1996 American Institute of Physics.

引用

页码：3299 / 3301

页数：3

共 16 条

[1] MECHANISMS OF STRAINED ISLAND FORMATION IN MOLECULAR-BEAM EPITAXY OF INAS ON GAAS(100) [J].

CHEN, P ;

XIE, Q ;

MADHUKAR, A ;

CHEN, L ;

KONKAR, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (04) :2568-2573

[2]

CIRLIN GE, IN PRESS SURF SCI

[3] SPECTROSCOPY OF QUANTUM LEVELS IN CHARGE-TUNABLE INGAAS QUANTUM DOTS [J].

DREXLER, H ;

LEONARD, D ;

HANSEN, W ;

KOTTHAUS, JP ;

PETROFF, PM .

PHYSICAL REVIEW LETTERS, 1994, 73 (16) :2252-2255

[4] COHERENT ISLANDS AND MICROSTRUCTURAL EVOLUTION [J].

DRUCKER, J .

PHYSICAL REVIEW B, 1993, 48 (24) :18203-18206

[5] DISLOCATION-FREE STRANSKI-KRASTANOW GROWTH OF GE ON SI(100) [J].

EAGLESHAM, DJ ;

CERULLO, M .

PHYSICAL REVIEW LETTERS, 1990, 64 (16) :1943-1946

[6] OPTICAL INVESTIGATION OF THE SELF-ORGANIZED GROWTH OF INAS/GAAS QUANTUM BOXES [J].

GERARD, JM ;

GENIN, JB ;

LEFEBVRE, J ;

MOISON, JM ;

LEBOUCHE, N ;

BARTHE, F .

JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) :351-356

[7]

Ghaisas S. V., 1988, Proceedings of the SPIE - The International Society for Optical Engineering, V944, P16, DOI 10.1117/12.947348

[8] KINETIC ASPECTS OF GROWTH FRONT SURFACE-MORPHOLOGY AND DEFECT FORMATION DURING MOLECULAR-BEAM EPITAXY GROWTH OF STRAINED THIN-FILMS [J].

GHAISAS, SV ;

MADHUKAR, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (02) :264-268

[9] ONSET OF INCOHERENCY AND DEFECT INTRODUCTION IN THE INITIAL-STAGES OF MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGHLY STRAINED INXGA1-XAS ON GAAS(100) [J].

GUHA, S ;

MADHUKAR, A ;

RAJKUMAR, KC .

APPLIED PHYSICS LETTERS, 1990, 57 (20) :2110-2112

[10] CRITICAL LAYER THICKNESS FOR SELF-ASSEMBLED INAS ISLANDS ON GAAS [J].

LEONARD, D ;

POND, K ;

PETROFF, PM .

PHYSICAL REVIEW B, 1994, 50 (16) :11687-11692

← 1 2 →