Ion back-bombardment of GaAs photocathodes inside DC high voltage electron guns

被引：0

作者：

Grames, J ^{[1
]}

Adderley, P ^{[1
]}

Brittian, J ^{[1
]}

Charles, D ^{[1
]}

Clark, J ^{[1
]}

Hansknecht, J ^{[1
]}

Poelker, M ^{[1
]}

Stutzman, M ^{[1
]}

Surles-Law, K ^{[1
]}

机构：

[1] Thomas Jefferson Natl Accelerator Facil, Newport News, VA 23606 USA

来源：

2005 IEEE PARTICLE ACCELERATOR CONFERENCE (PAC), VOLS 1-4 | 2005年

关键词：

D O I：

暂无

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

DC high voltage GaAs photoguns are key components at accelerator facilities worldwide. New experiments and new accelerator facilities demand improved performance from these guns, in particular higher current operation and longer photocathode operating lifetime. This conference submission explores bulk GaAs photocathode lifetime as a function of beam current, active photocathode area, laser spot size and the vacuum of the gun and beam line. Lifetime measurements were made at 100 A, a beam current relevant for accelerators like CEBAF, and at beam currents of 1 mA and 5 mA, a regime that is interesting for high current Free Electron Laser (FEL) and Energy Recovery Linac (ERL) operation.

引用

页码：4114 / 4116

页数：3

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