Chemical mechanical polishing of polyarylether low dielectric constant layers by manganese oxide slurry

被引：26

作者：

Hara, T ^{[1
]}

Tomisawa, T

Kurosu, T

Doy, TK

机构：

[1] Hosei Univ, Dept Elect Engn, Koganei, Tokyo 1840002, Japan

[2] Saitama Univ, Fac Educ, Urawa, Saitama 3388570, Japan

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1999年 / 146卷 / 06期

关键词：

D O I：

10.1149/1.1391936

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Polishing of low dielectric constant (low k) organic layers of polyarylether (poly-AE) has been studied. Removal rate of poly-AE is 52 nm/min in polishing by MnO(2) slurry at pressure of 163 g/cm(2). This rate is 4.2 times greater than that achieved by fumed silica slurry. This rate increase is due to the enhancement of chemical polishing through employing a chemically active slurry of MnO(2). Removal rate for tantalum nitride (TaN) barrier is 97 Nn/min in MnO(2) slurry. This rate is much greater than the 44 nm/min achieved by fumed silica slurry. Although many deep scratches are formed at the surface of the poly-AE layer by the polishing of fumed silica slurry, no deep scratches are found at the surface polished by MnO(2) slurry. (C) 1999 The Electrochemical Society. S0013-4651(98)09-006-5. All rights reserved.

引用

页码：2333 / 2336

页数：4

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