In Situ Localized Growth of Porous Tin Oxide Films on Low Power Microheater Platform for Low Temperature CO Detection

被引:68
作者
Long, Hu [1 ,2 ,5 ]
Harley-Trochimczyk, Anna [1 ,2 ]
He, Tianyi [2 ,3 ]
Thang Pham [4 ,6 ,7 ,8 ]
Tang, Zirong [5 ]
Sho, Tielin [5 ]
Zettl, Alex [4 ,6 ,7 ,8 ]
Mickelson, William [2 ,4 ]
Carraro, Carlo [1 ,2 ]
Maboudian, Roya [1 ,2 ]
机构
[1] Univ Calif Berkeley, Berkeley Sensor & Actuator Ctr, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Dept Chem & Biomol Engn, Berkeley, CA 94720 USA
[3] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
[4] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
[5] Huazhong Univ Sci & Technol, State Key Lab Digital Mfg Equipment & Technol, Wuhan 430074, Peoples R China
[6] Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA
[7] Univ Calif Berkeley, Kavli Energy NanoSci Inst, Berkeley, CA 94720 USA
[8] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Berkeley, CA 94720 USA
基金
美国国家科学基金会;
关键词
gas sensors; in situ synthesis; low power; microheater; nanocrystalline tin oxide; CO sensor; THIN-FILM; FAST-RESPONSE; GAS SENSORS; CARBON; METAL; NANOTUBES; PLATINUM;
D O I
10.1021/acssensors.5b00302
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
This paper reports a facile method for creating a nanostructured metal oxide film on a low power microheater sensor platform and the direct realization of this structure as a gas sensor. By fast annealing the deposited liquid precursors with the microheater, a highly porous, nanocrystalline metal oxide film can be generated in situ and locally on the sensor platform. With only minimal processing, a high performance, miniaturized gas sensor is ready for use. A carbon monoxide sensor using the in situ synthesized porous tin oxide (SnO2) sensing film is made as a demonstration of this technique. The sensor exhibits a low detection limit and fast response and recovery time at a low operating temperature. This facile fabrication method is highly flexible and has great potential for large-scale gas sensor fabrication.
引用
收藏
页码:339 / 343
页数:5
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