Novel materials by atomic layer deposition and molecular layer deposition

被引:40
|
作者
Leskela, Markku [1 ]
Ritala, Mikko [1 ]
Nilsen, Ola [2 ]
机构
[1] Univ Helsinki, FIN-00014 Helsinki, Finland
[2] Univ Oslo, N-0316 Oslo, Norway
关键词
HIGH-DIELECTRIC-CONSTANT; THIN-FILMS; SURFACE-CHEMISTRY; TIO2; FILMS; METAL; GROWTH; PRECURSORS; ALD;
D O I
10.1557/mrs.2011.240
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Over the past 10 years, the number of materials that can be processed by atomic layer deposition (ALD) has expanded rapidly. Significant progress has been seen in ALD of high-kappa oxides, ternary oxides, and noble metals, which have been studied quite extensively. High-kappa oxide processes are used today in various industrial applications. However, many new applications are pushing the need for less common compounds, and therefore new processes are being developed (e. g., for fluorides, Li containing compounds, and phosphates). New ALD processes require new designs for volatile precursors to deliver elements with ligands that ensure self-limiting surface reactions. In addition to inorganics, new polymeric and inorganic-organic hybrid materials are opening new frontiers for ALD, including expansion of the process to include molecular layer deposition. A combination of inorganic and organic parts in the deposited layers offers expanding opportunities for tailoring materials properties.
引用
收藏
页码:877 / 884
页数:8
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