Cathodic localization of metal coatings on silicon carbide crystals

被引：1

作者：

Karachinov, VA ^{[1
]}

机构：

[1] Novosibirsk State Univ, Velikii Novgorod, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2002年 / 28卷 / 05期

关键词：

Copper; Silicon; Experimental Data; Carbide; Electrical Property;

D O I：

10.1134/1.1482761

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Experimental data on the electrical properties of metal contacts fabricated by depositing copper from a porous electrode onto the surface of silicon carbide crystals are reported. (C) 2002 MAIK "Nauka/Interperiodica".

引用

页码：439 / 440

页数：2

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