Effects of CeO2 buffer layer thickness on the orientation and dielectric proper-ties of Ba(Zr0.20Ti0.80)O3 thin films

被引：8

作者：

Gao, Lina ^{[1
]}

Zhai, Jiwei ^{[1
]}

Song, Sangnian ^{[1
]}

Hao, Xihong ^{[1
]}

Yao, Xi ^{[1
]}

机构：

[1] Tongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2009年 / 311卷 / 02期

关键词：

Crystal structure; X-ray diffraction; Oxides; Ferroelectric materials; HIGH TUNABILITY; STRAIN; MGO;

D O I：

10.1016/j.jcrysgro.2008.11.062

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Ba(Zr0.20Ti0.80)O-3 (BZT) thin films are deposited on Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates by the sol-gel technique. The thickness of the CeO2, serving as a buffer layer, is varied from 0 to 20 nm, to study the dependence of the orientation and dielectric properties of the BZT thin films on the buffer layer thickness. The influence of buffer layer thickness on the microstructure of the thin films is also examined. Dielectric properties of the thin films are investigated as a function of temperature and direct current electric field. The results show that the CeO2 buffer layer strongly influences the orientation, microstructure and the dielectric properties of the films. The BZT thin films with 5 nm thickness CeO2 buffer layer have the least loss, smallest leakage current and largest figure of merit (FOM). (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：299 / 303

页数：5

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