Investigation of Ge-Sn-Te alloy for long data retention and high speed phase change memory application

被引：7
作者：
Zhang, Zhonghua [1 ,2 ]
Song, Sannian [1 ]
Song, Zhitang [1 ]
Cheng, Yan [1 ]
Rao, Feng [1 ]
Wu, Liangcai [1 ]
Liu, Bo [1 ]
Chen, Bomy [1 ]
Lu, Yegang [3 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai, Peoples R China
[2] Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China
[3] Ningbo Univ, Fac Informat Sci & Engn, Ningbo 315211, Zhejiang, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 14期
基金：
中国国家自然科学基金;
关键词：
GE2SB2TE5; TRANSITION; FILMS;
D O I：
10.1063/1.4824303
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Ge44Sn14Te42 phase change material exhibits a higher crystallization temperature (similar to 221 degrees C), a larger crystallization activation energy (similar to 2.88 eV) and a better data retention ability (similar to 126 degrees C for 10 years) in comparison with those of Ge2Sb2Te5. A reversible switching between set and reset can be realized by an electric pulse as short as 10 ns for Ge44Sn14Te42 based phase change memory (PCM) cell. In addition, PCM based on Ge44Sn14Te42 shows endurance up to 2.7 x 10(3) cycles with a resistance of about two orders of magnitude on/off ratio. (C) 2013 AIP Publishing LLC.
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页数：4
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