Proving Nontrivial Topology of Pure Bismuth by Quantum Confinement

被引：81

作者：

Ito, S. ^{[1
]}

Feng, B. ^{[1
]}

Arita, M. ^{[2
]}

Takayama, A. ^{[3
]}

Liu, R. -Y. ^{[1
]}

Someya, T. ^{[1
]}

Chen, W. -C. ^{[4
]}

Iimori, T. ^{[1
]}

Namatame, H. ^{[2
]}

Taniguchi, M. ^{[2
]}

Cheng, C. -M. ^{[4
]}

Tang, S. -J. ^{[4
,5
]}

Komori, F. ^{[1
]}

Kobayashi, K. ^{[6
]}

Chiang, T. -C. ^{[7
,8
]}

Matsuda, I. ^{[1
]}

机构：

[1] Univ Tokyo, Inst Solid State Phys ISSP, Kashiwa, Chiba 2778581, Japan

[2] Hiroshima Univ, Hiroshima Synchrotron Radiat Ctr HSRC, Hiroshima 7390046, Japan

[3] Univ Tokyo, Dept Phys, Bunkyo Ku, Tokyo 1130033, Japan

[4] Natl Synchrotron Radiat Res Ctr NSRRC, Hsinchu 30076, Taiwan

[5] Natl Tsing Hua Univ, Dept Phys & Astron, Hsinchu 30013, Taiwan

[6] Ochanomizu Univ, Dept Phys, Bunkyo Ku, Tokyo 1128610, Japan

[7] Univ Illinois, Dept Phys, Urbana, IL 61801 USA

[8] Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA

来源：

PHYSICAL REVIEW LETTERS | 2016年 / 117卷 / 23期

基金：

美国国家科学基金会;

关键词：

SURFACE-STATES; THIN-FILMS; SUPERCONDUCTORS; POLARIZATION; NANORIBBONS; INSULATORS;

D O I：

10.1103/PhysRevLett.117.236402

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The topology of pure Bi is controversial because of its very small (similar to 10 meV) band gap. Here we perform high-resolution angle-resolved photoelectron spectroscopy measurements systematically on 14-202 bilayer Bi films. Using high-quality films, we succeed in observing quantized bulk bands with energy separations down to similar to 10 meV. Detailed analyses on the phase shift of the confined wave functions precisely determine the surface and bulk electronic structures, which unambiguously show nontrivial topology. The present results not only prove the fundamental property of Bi but also introduce a capability of the quantum-confinement approach.

引用

页数：6

共 52 条

[1] Electronic phase transitions of bismuth under strain from relativistic self-consistent GW calculations [J].

Aguilera, Irene ;

Friedrich, Christoph ;

Bluegel, Stefan .

PHYSICAL REVIEW B, 2015, 91 (12)

[2]

[Anonymous], 1826, ANN PHYS-NEW YORK, DOI DOI 10.1002/ANDP.18260820302

[3] Electronic structure of a bismuth bilayer -: art. no. 113102 [J].

Ast, CR ;

Höchst, H .

PHYSICAL REVIEW B, 2003, 67 (11) :4

[4] Fermi surface of Bi(111) measured by photoemission spectroscopy -: art. no. 177602 [J].

Ast, CR ;

Höchst, H .

PHYSICAL REVIEW LETTERS, 2001, 87 (17) :177602-177602

[5]

Autès G, 2016, NAT MATER, V15, P154, DOI [10.1038/NMAT4488, 10.1038/nmat4488]

[6] Signatures of electron fractionalization in ultraquantum bismuth [J].

Behnia, Kamran ;

Balicas, Luis ;

Kopelevich, Yakov .

SCIENCE, 2007, 317 (5845) :1729-1731

[7] Electronic structure and surface-mediated metastability of Bi films on Si(111)-7x7 studied by angle-resolved photoemission spectroscopy [J].

Bian, G. ;

Miller, T. ;

Chiang, T. -C. .

PHYSICAL REVIEW B, 2009, 80 (24)

[8] PROJECTOR AUGMENTED-WAVE METHOD [J].

BLOCHL, PE .

PHYSICAL REVIEW B, 1994, 50 (24) :17953-17979

[9]

Brugmans A., 1778, MAGNETISMUS SEU AFFI

[10] Photoemission studies of quantum well states in thin films [J].

Chiang, TC .

SURFACE SCIENCE REPORTS, 2000, 39 (7-8) :181-235

← 1 2 3 4 5 6 →