Efficiency improvement of green light-emitting diodes by employing all-quaternary active region and electron-blocking layer

被引：27
作者：
Usman, Muhammad [1 ]
Saba, Kiran [1 ]
Han, Dong-Pyo [2 ]
Muhammad, Nazeer [3 ]
机构：
[1] Ghulam Ishaq Khan Inst Engn Sci & Technol, Fac Engn Sci, Topi 23460, Pakistan
[2] Meijo Univ, Fac Sci & Technol, Tempaku Ku, 1-501 Shiogamaguchi, Nagoya, Aichi 4688502, Japan
[3] COMSATS Inst Informat Technol, Dept Math, Wah Cantt 47040, Pakistan
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2018年 / 113卷
关键词：
QUANTUM-WELLS; POLARIZATION; BARRIER;
D O I：
10.1016/j.spmi.2017.11.046
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
High efficiency of green GaAIInN-based light-emitting diode (LED) has been proposed with peak emission wavelength of similar to 510 nm. By introducing quaternary quantum well (QW) along with the quaternary barrier (QB) and quaternary electron blocking layer (EBL) in a single structure, an efficiency droop reduction of up to 29% has been achieved in comparison to the conventional GaN-based LED. The proposed structure has significantly reduced electrostatic field in the active region. As a result, carrier leakage has been minimized and spontaneous emission rate has been doubled. (C) 2017 Elsevier Ltd. All rights reserved.
引用
收藏
页码：585 / 591
页数：7
相关论文
共 21 条
[1]   Spontaneous polarization and piezoelectric constants of III-V nitrides [J].
Bernardini, F ;
Fiorentini, V ;
Vanderbilt, D .
PHYSICAL REVIEW B, 1997, 56 (16) :10024-10027
[2]   Numerical study of optical properties of InGaN multi-quantum-well laser diodes with polarization-matched AlInGaN barrier layers [J].
Chen, J. -R. ;
Ling, S. -C. ;
Huang, H. -M. ;
Su, P. -Y. ;
Ko, T. -S. ;
Lu, T. -C. ;
Kuo, H. -C. ;
Kuo, Y. -K. ;
Wang, S. -C. .
APPLIED PHYSICS B-LASERS AND OPTICS, 2009, 95 (01) :145-153
[3]   Efficiency droop in light-emitting diodes: Challenges and countermeasures [J].
Cho, Jaehee ;
Schubert, E. Fred ;
Kim, Jong Kyu .
LASER & PHOTONICS REVIEWS, 2013, 7 (03) :408-421
[4]   The reduction of efficiency droop by Al0.82In0.18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes [J].
Chung, Roy B. ;
Han, Changseok ;
Pan, Chih-Chien ;
Pfaff, Nathan ;
Speck, James S. ;
DenBaars, Steven P. ;
Nakamura, Shuji .
APPLIED PHYSICS LETTERS, 2012, 101 (13)
[5]   Effects of macroscopic polarization in III-V nitride multiple quantum wells [J].
Fiorentini, V ;
Bernardini, F ;
Della Sala, F ;
Di Carlo, A ;
Lugli, P .
PHYSICAL REVIEW B, 1999, 60 (12) :8849-8858
[6]  
FRED ES, 2006, LIGHT EMITTING DIODE
[7]   Numerical simulation of blue InGaN light-emitting diodes with polarization-matched AlGaInN electron-blocking layer and barrier layer [J].
Kuo, Yen-Kuang ;
Tsai, Miao-Chan ;
Yen, Sheng-Horng .
OPTICS COMMUNICATIONS, 2009, 282 (21) :4252-4255
[8]   Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers [J].
Kuo, Yen-Kuang ;
Chang, Jih-Yuan ;
Tsai, Miao-Chan ;
Yen, Sheng-Horng .
APPLIED PHYSICS LETTERS, 2009, 95 (01)
[9]   Achieving High-Performance Blue GaN-Based Light-Emitting Diodes by Energy Band Modification on AlxInyGa1-x-yN Electron Blocking Layer [J].
Lin, Zhiting ;
Wang, Haiyan ;
Chen, Shuqi ;
Lin, Yunhao ;
Yang, Meijuan ;
Li, Guoqiang ;
Xu, Bingshe .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (02) :472-480
[10]   Efficiency-Droop Suppression by Using Large-Bandgap AlGaInN Thin Barrier Layers in InGaN Quantum-Well Light-Emitting Diodes [J].
Liu, Guangyu ;
Zhang, Jing ;
Tan, Chee-Keong ;
Tansu, Nelson .
IEEE PHOTONICS JOURNAL, 2013, 5 (02)
123