Compositional plane and properties of solid solution semiconductor Pb1-xCaxS1-ySey for mid-infrared lasers

被引:5
作者
Abe, S [1 ]
Masumoto, K [1 ]
机构
[1] Res Inst Elect & Magnet Mat, Sendai, Miyagi 9820807, Japan
关键词
Pb1-xCaxS1-ySey; mid-infrared laser; hot wall epitaxy; compositional plane; solid solution semiconductor; lead chalcogenide;
D O I
10.1016/S0022-0248(99)00192-X
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
We have investigated Pb1 - xCaxS1 - ySey solid solution semiconductor. Results obtained on bulk thermal equilibrium heat-treated samples show that the lattice constants and the energy band gaps at room temperature of the Pb1 - xCaxS1 - ySey system change, respectively, from 5.862 to 6.120 Angstrom and 0.286 to around 0.9 eV. Namely, the variation of the energy band gap suggests that the Pb1 - xCaxS1 - ySey system covers a wide wavelength range from mid-infrared to near infrared if this quaternary solid solution is used as the active layer in a laser diode. From the results obtained by high-resolution X-ray diffraction with a four-crystal monochromator, no rhombohedral distortion is formed in Pb1 - xCaxS thin films employing BaF2(1 1 1) substrate and that the quality of these films is limited by mosaicity rather than slight variations of the lattice constant. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:115 / 121
页数:7
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