Characteristics of submicron MOS varactors

被引：0

作者：

Jenkins, KA ^{[1
]}

Ainspan, H ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Box 218, Yorktown Hts, NY 10598 USA

来源：

2006 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS | 2006年

关键词：

varactor; MOS varactor; capacitance; tuning range; Q-factor; submicron; MOS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An experimental study of the capacitive parameters of submicron accumulation-mode MOS varactors is reported. Varactors are studied as a function of channel length and width. As the device channels are scaled to smaller and smaller dimensions to achieve higher frequency circuits, the capacitance tuning range decreases because of a relative increase of fixed capacitance. At the same time, the Q-factor of the varactor increases, thus requiring the circuit designer to choose the best gate length to optimize both parameters.

引用

页码：123 / +

页数：2