A K-Band 5W Doherty Amplifier MMIC Utilizing 0.15μm GaN on SiC HEMT Technology

被引：30

作者：

Campbell, Charles F. ^{[1
]}

Tran, Kim ^{[1
]}

Kao, Ming-Yih ^{[1
]}

Nayak, Sabyasachi ^{[1
]}

机构：

[1] TriQuint Semicond, Def Prod & Foundry Serv, 500 W Renner Rd, Richardson, TX USA

来源：

2012 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS) | 2012年

关键词：

MMIC; Gallium Nitride; Doherty amplifier; power amplifier;

D O I：

10.1109/CSICS.2012.6340057

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The design and performance of a K-Band Doherty amplifier MMIC is presented. The monolithic 2-stage amplifier was fabricated with a dual field plate 0.15 mu m GaN on SiC HEMT process technology. Measured continuous wave results at 23GHz demonstrate over 5W of saturated output power and up to 48% power added efficiency. Peak efficiency occurs at approximately 1dB of gain compression and the amplifier maintains 25% power added efficiency at 8dB of input power back off from P1dB.

引用

页数：4