Electron spin dynamics in mesoscopic GaN nanowires

被引：9

作者：

Buss, J. H. ^{[1
]}

Fernandez-Garrido, S. ^{[2
,3
]}

Brandt, O. ^{[2
]}

Haegele, D. ^{[1
]}

Rudolph, J. ^{[1
]}

机构：

[1] Ruhr Univ Bochum, Fac Phys & Astron, Expt Phys AG 6, Bochum, Germany

[2] Leibniz Inst Forsch Verbund Berlin eV, Paul Drude Inst Festkorperelekt, Hausvogteipl 5-7, D-10117 Berlin, Germany

[3] Univ Autonoma Madrid, Dept Fis Aplicada, Grp Elect & Semicond, C Francisco Tomas & Valiente 7, E-28049 Madrid, Spain

来源：

APPLIED PHYSICS LETTERS | 2019年 / 114卷 / 09期

关键词：

RELAXATION; GROWTH;

D O I：

10.1063/1.5080508

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electron spin dynamics in spontaneously formed GaN nanowires (NWs) on Si(111) is investigated by time-resolved magneto-optical Kerr-rotation spectroscopy for temperatures from 15 to 260 K. A strong increase in the electron spin relaxation time by more than an order of magnitude is found as compared to bulk GaN. The temperature dependence of spin relaxation is characterized by two regimes, which are explained by a model taking into account the coexistence of two different mechanisms. As a result, the spin lifetime is limited by hyperfine interaction of localized electron spins with nuclear spins at low temperatures. The mesoscopic electron confinement in the NWs leads to a dominance of Dyakonov-Perel spin relaxation driven by interface-induced contributions at high temperatures, resulting in a slow-down, but not complete suppression of spin relaxation as compared to bulk GaN. These findings underline the important role of the high surface-to-volume ratio in NWs. Published under license by AIP Publishing.

引用

页数：5

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