Correlation between structural and mechanical properties of silicon doped DLC thin films

被引：35

作者：

Ghadai, Ranjan Kr. ^{[1
]}

Das, Soham ^{[1
]}

Kumar, Dhruva ^{[1
]}

Mondal, Subhash C. ^{[2
]}

Swain, Bibhu P. ^{[3
]}

机构：

[1] Sikkim Manipal Inst Technol, Dept Mech Engn, Rangpo 737136, East Sikkim, India

[2] Indian Inst Engn Sci & Technol, Dept Mech Engn, Sibpur 711103, Howrah, India

[3] Sikkim Manipal Inst Technol, Ctr Mat Sci & Nanotechnol, Rangpo 737136, Sikkim, India

来源：

关键词：

Si doped DLC; Nanoindentation; Raman spectroscopy; FESEM; SIC-H FILMS; CARBON-FILMS; RAMAN-SPECTROSCOPY; THERMAL-STABILITY; MICROSTRUCTURE; ADHESION; BEHAVIOR; HARDNESS; LOAD; XPS;

D O I：

10.1016/j.diamond.2017.12.012

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon doped diamond like carbon (Si-DLC) thin films were deposited on SiO2/Si substrates with different H-2 flow rate. The deposited Si-DLC films were characterized by field emission scanning electron microscopy (FESEM), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and nanoindentation characterizations. The FESEM images reveal the smooth Si-DLC thin films at lower H-2 flow rate, however, increased surface roughness with increasing H-2 flow rate. The Raman spectroscopy of Si-DLC thin films confirmed carbon nanocluster decreasing from 60.4 to 49.3 nm with increasing of H-2 flow rates. The Raman signature at 796, 968 and 1530 cm(-1) correspond to transverse optic (TO), longitudinal optic (LO) and Si attachment to graphitic carbon respectively in the Si-DLC thin films. The maximum hardness and Young's modulus were 17.95 GPa and 186.65 GPa for 70 sccm and 90 sccm H-2 flow rate respectably. The XPS results reveal Si at.% decreased from 18.91 to 14.15 of the Si-DLC thin films within creased by H-2 flow rate.

引用

页码：25 / 32

页数：8

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