Measurement of Voltage-Dependent Capacitance Using a TDR System

被引：2

作者：

Ariga, Zen-Nosuke ^{[1
]}

Wada, Keiji ^{[2
]}

Shimizu, Toshihisa ^{[3
]}

机构：

[1] Tokyo Metropolitan Univ, Grad Sch, Tokyo, Japan

[2] Tokyo Metropolitan Univ, Dept Elect & Elect Engn, Tokyo, Japan

[3] Tokyo Metropolitan Univ, Grad Sch Engn, Tokyo, Japan

来源：

ELECTRICAL ENGINEERING IN JAPAN | 2012年 / 181卷 / 03期

关键词：

circuit parameter; equivalent circuit; MOSFET; TDR; voltage-dependent capacitance;

D O I：

10.1002/eej.21289

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The measurement of circuit parameters and the evaluation of equivalent circuit models are necessary for noise analysis or high-speed operation circuit design for power electronics circuits. Recently, time domain reflectometry (TDR) has emerged as a technique for measuring circuit parameters. This paper proposes a TDR method for measuring the voltage-dependent capacitance of a power MOS-FET. This method can be used to measure the output capacitance C-oss of a MOSFET for any DC bias voltage. The C-oss of a MOSFET with V-DS = 350 V was measured in an experiment, while the datasheet gives values of C-oss only for V-DS values in the range of 35 to 100 V. (C) 2012 Wiley Periodicals, Inc. Electr Eng Jpn, 181(3): 31-38, 2012; Published online in Wiley Online Library (wileyonlinelibrary.com). DOI 10.1002/eej.21289

引用

页码：31 / 38

页数：8

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