Effects of gate voltage on the current-voltage characteristics of λ-DNA molecules

被引:0
|
作者
Kim, KS [1 ]
Ahn, SK [1 ]
Lee, Y [1 ]
Lee, JM [1 ]
Roh, Y [1 ]
机构
[1] Sungkyunkwan Univ, Sch Informat & Commun Engn, Suwon 440746, South Korea
关键词
DNA; conduction; I-V characteristics;
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We investigated the effects of gate voltage on the source-drain current (Id) measured through a bundle of A-phase DNA molecular wires. The DNA molecules were attached on gold electrodes with a nanometer gap (similar to 20 nm), and I-ds was measured by changing both gate and source-drain voltages. We found that the modulation Of Id was possible by simply controlling the magnitude and/or polarity of gate voltage. For example, the absolute value of I-ds increases when the magnitude of gate voltage increases toward the positive direction. On the other hand, the absolute value of I-ds decreases if the magnitude of negative gate voltage increases. Based on these results, we argued that the A-phase DNA molecules might be treated as n-type semiconductor materials. We also suggested that the effective diameter of DNA wires is an important factor in deciding the magnitude of conductivity.
引用
收藏
页码:S535 / S538
页数:4
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