Critical Crystal Growth of Graphene on Dielectric Substrates at Low Temperature for Electronic Devices

被引：130

作者：

Wei, Dacheng ^{[1
]}

Lu, Yunhao ^{[1
]}

Han, Cheng ^{[2
]}

Niu, Tianchao ^{[2
]}

Chen, Wei ^{[1
,2
]}

Wee, Andrew Thye Shen ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore

[2] Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore

来源：

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION | 2013年 / 52卷 / 52期

关键词：

chemical vapor deposition; crystal growth; graphene; nanomaterials; scanning probe microscopy; CHEMICAL-VAPOR-DEPOSITION; PLASMA; FILMS;

D O I：

10.1002/anie.201306086

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Born at its final resting place: Moderate etching by a hydrogen plasma during plasma-enhanced chemical vapor deposition led to a critical equilibrium state of graphene edge growth in which graphene hexagonal single crystals or continuous graphene films were produced directly on dielectric substrates at 400 °C without a catalyst (see picture). The direct use of the resulting high-quality graphene in devices avoids troublesome transfer processes. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：14121 / 14126

页数：6

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