Monitoring of cleanroom airborne molecular contamination by Time-of-Flight SIMS

被引:0
作者
Goodman, GG [1 ]
Lindley, PM [1 ]
McCaig, LA [1 ]
机构
[1] Charles Evans & Associates, Redwood City, CA 94063 USA
来源
INSTITUTE OF ENVIRONMENTAL SCIENCES AND TECHNOLOGY, PROCEEDINGS 1999: CONTAMINATION CONTROL - DESIGN, TEST, AND EVALUATION - PRODUCT RELIABILITY | 1999年
关键词
airborne molecular contamination; AMC; microelectronic devices; cleanrooms; TOF-SIMS;
D O I
暂无
中图分类号
X [环境科学、安全科学];
学科分类号
08 ; 0830 ;
摘要
Airborne molecular contamination (AMC) that can deposit on product and processing equipment is a growing concern in cleanrooms. Using a newly installed class 10 cleanroom in our laboratory, we have investigated the deposition of AMC on witness wafers. Since it was expected that more outgassing of construction materials would occur immediately after the cleanroom came on-line, a goal of the work was to evaluate how quickly this outgassing rate changed with time. Silicon wafers were exposed to the cleanroom environment for varying periods of time and were subsequently analyzed using Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS). Because TOF-SIMS can be used to directly analyze wafer or product surfaces, it provides information about the types of AMC that adsorb onto surfaces of interest. In addition, ionic species such as halides and metals can be detected simultaneously. Molecular species, including silicones, phthalates, fatty acids, organic amines and alcohol amines are observed on the wafers. The relative intensities of most of these organic species reached a maximum approximately 1-2 months after the cleanroom came on-line. After that time, the intensities of these species actually decreased. Inorganic species detected included sulfur oxides and halides, along with the dopant species boron and phosphorus. These species typically reached an equilibrium concentration after 1-2 months, but did not show the same decrease that was noted for the organic compounds.
引用
收藏
页码:131 / 137
页数:7
相关论文
共 7 条
  • [1] MICROSCOPE IMAGING BY TIME-OF-FLIGHT SECONDARY ION MASS-SPECTROMETRY
    SCHUELER, BW
    [J]. MICROSCOPY MICROANALYSIS MICROSTRUCTURES, 1992, 3 (2-3): : 119 - 139
  • [2] SMITH P, 1998, 1998 INT C AM I PHYS, P133
  • [3] BORON CONTAMINATION OF SURFACES IN SILICON MICROELECTRONICS PROCESSING - CHARACTERIZATION AND CAUSES
    STEVIE, FA
    MARTIN, EP
    KAHORA, PM
    CARGO, JT
    NANDA, AK
    HARRUS, AS
    MULLER, AJ
    KRAUTTER, HW
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (05): : 2813 - 2816
  • [4] STROSSMAN G, 1998, SECONDARY ION MASS S, P699
  • [5] Takeda K, 1998, INSTITUTE OF ENVIRONMENTAL SCIENCES AND TECHNOLOGY, 1998 PROCEEDINGS - CONTAMINATION CONTROL, P556
  • [6] THAMES SF, 1985, ACS SYM SER, V285, P1129
  • [7] 1998, CLEANROOMS, P21