Experimental evidence of the quantum point contact theory in the conduction mechanism of bipolar HfO2-based resistive random access memories

被引：48

作者：

Procel, L. M. ^{[1
,2
]}

Trojman, L. ^{[2
]}

Moreno, J. ^{[2
]}

Crupi, F. ^{[1
]}

Maccaronio, V. ^{[1
]}

Degraeve, R. ^{[3
]}

Goux, L. ^{[3
]}

Simoen, E. ^{[3
]}

机构：

[1] Univ Calabria, Dipartimento Ingn Informat Modellist Elettron & S, I-87036 Arcavacata Di Rende, CS, Italy

[2] Univ San Francisco Quito, Colegio Ciencias & Ingn, Quito, Ecuador

[3] IMEC, B-3001 Louvain, Belgium

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 114卷 / 07期

关键词：

RESISTANCE-SWITCHING CHARACTERISTICS; CURRENT-VOLTAGE CHARACTERISTICS; NONVOLATILE MEMORY; OXIDE;

D O I：

10.1063/1.4818499

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The quantum point contact (QPC) model for dielectric breakdown is used to explain the electron transport mechanism in HfO2-based resistive random access memories (ReRAM) with TiN(30 nm)\HfO2(5 nm)\Hf(10 nm)\TiN(30 nm) stacks. Based on experimental I-V characteristics of bipolar HfO2-based ReRAM, we extracted QPC model parameters related to the conduction mechanism in several devices in order to make a statistical study. In addition, we investigated the temperature effect on the conduction mechanism and compared it with the QPC model. Based on these experimental results, we show that the QPC model agrees well with the conduction behavior of HfO2-based ReRAM memory cells. (C) 2013 AIP Publishing LLC.

引用

页数：5

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