Broadband high photoresponse from pure monolayer graphene photodetector

被引:756
作者
Zhang, Yongzhe [1 ]
Liu, Tao [1 ]
Meng, Bo [1 ]
Li, Xiaohui [1 ]
Liang, Guozhen [1 ]
Hu, Xiaonan [1 ]
Wang, Qi Jie [1 ,2 ,3 ]
机构
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
[2] Nanyang Technol Univ, Sch Phys & Math Sci, Singapore 637371, Singapore
[3] Nanyang Technol Univ, Ctr Disrupt Photon Technol, Singapore 637371, Singapore
来源
NATURE COMMUNICATIONS | 2013年 / 4卷
关键词
UV PHOTODETECTORS; PLASMON RESONANCE; GENERATION; SPECTROSCOPY; NANORIBBONS; FABRICATION; RADIATION; TRANSPORT; ELECTRON;
D O I
10.1038/ncomms2830
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Graphene has attracted large interest in photonic applications owing to its promising optical properties, especially its ability to absorb light over a broad wavelength range, which has lead to several studies on pure monolayer graphene-based photodetectors. However, the maximum responsivity of these photodetectors is below 10 mAW(-1), which significantly limits their potential for applications. Here we report high photoresponsivity (with high photoconductive gain) of 8.61 AW(-1) in pure monolayer graphene photodetectors, about three orders of magnitude higher than those reported in the literature, by introducing electron trapping centres and by creating a bandgap in graphene through band structure engineering. In addition, broadband photoresponse with high photoresponsivity from the visible to the mid- infrared is experimentally demonstrated. To the best of our knowledge, this work demonstrates the broadest photoresponse with high photoresponsivity from pure monolayer graphene photodetectors, proving the potential of graphene as a promising material for efficient optoelectronic devices.
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页数:11
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