The structures of neutral transition metal doped silicon clusters, SinX (n=6-9; X = V, Mn)

被引:41
作者
Claes, Pieterjan [1 ]
Vu Thi Ngan [2 ]
Haertelt, Marko [3 ]
Lyon, Jonathan T. [3 ,4 ]
Fielicke, Andre [3 ,5 ]
Minh Tho Nguyen [2 ]
Lievens, Peter [1 ]
Janssens, Ewald [1 ]
机构
[1] Katholieke Univ Leuven, Lab Solid State Phys & Magnetism, B-3001 Louvain, Belgium
[2] Katholieke Univ Leuven, Dept Chem, B-3001 Louvain, Belgium
[3] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Germany
[4] Clayton State Univ, Dept Nat Sci, Morrow, GA 30260 USA
[5] Tech Univ Berlin, Inst Opt & Atomare Phys, D-10623 Berlin, Germany
关键词
SPECTROSCOPY; SPECTRA; PHOTOIONIZATION; GAS;
D O I
10.1063/1.4803871
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We present a combined experimental and theoretical investigation of small neutral vanadium and manganese doped silicon clusters SinX (n = 6-9, X = V, Mn). These species are studied by infrared multiple photon dissociation and mass spectrometry. Structural identification is achieved by comparison of the experimental data with computed infrared spectra of low-lying isomers using density functional theory at the B3P86/6-311+G(d) level. The assigned structures of the neutral vanadium and manganese doped silicon clusters are compared with their cationic counterparts. In general, the neutral and cationic SinV0,+ and SinMn0,+ clusters have similar structures, although the position of the capping atoms depends for certain sizes on the charge state. The influence of the charge state on the electronic properties of the clusters is also investigated by analysis of the density of states, the shapes of the molecular orbitals, and NBO charge analysis of the dopant atom. (C) 2013 AIP Publishing LLC.
引用
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页数:7
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