Infrared response of oxygen precipitates in silicon: Experimental and simulated spectra

被引：32
作者：
Sassella, A [1 ]
Borghesi, A
Geranzani, P
Borionetti, G
机构：
[1] INFM, I-20125 Milan, Italy
[2] Univ Milan, Dipartimento Sci Mat, I-20125 Milan, Italy
[3] MEMC Elect Mat, I-39012 Merano, BZ, Italy
[4] MEMC Elect Mat, I-28100 Novara, Italy
来源：
APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 08期
关键词：
D O I：
10.1063/1.124619
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A suitable choice of one sample among several silicon wafers subjected to two-step thermal treatments for oxygen precipitation permits to reveal a complete series of infrared absorption peaks related to the precipitates formed in the crystal. Structured spectra are observed at 7 K and can be interpreted as due to SiO(2) precipitates with different shapes and concentrations. (C) 1999 American Institute of Physics. [S0003-6951(99)02234-2].
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页码：1131 / 1133
页数：3
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