Characterization of Eu-doped SnO2 thin films deposited by radio-frequency sputtering for a transparent conductive phosphor layer

Eu-doped SnO2 thin films deposited by radio-frequency (rf) magnetron sputtering have been studied for the transparent conductive phosphor layer, which is transparent in visible light, electrically conductive, and luminescent. The resistivity of the SnO2 film increased as the firing temperature and Eu concentration increased. The film showed an excitation peak at 300 nm and an emission peak at 588 nm. The maximum photoluminescence and cathodoluminescence intensity was observed under conditions of 1.0 atom % Eu doping and a 1200 degrees C firing temperature; the resistivity was 0.5 Omega cm and the transmittance was above 70%. The relation between the resistivity and cathodoluminescence intensity has been discussed.