Monte Carlo simulation of excess noise in heterojunction avalanche photodetector

被引：4
作者：
Ghosh, A. [1 ]
Ghosh, K. K. [1 ]
机构：
[1] Ctr Sci Educ & Res, Kolkata 700094, W Bengal, India
来源：
OPTICAL AND QUANTUM ELECTRONICS | 2008年 / 40卷 / 5-6期
关键词：
Monte Carlo simulations; excess noise; heterojunction; avalanche; dead space; ionization probability;
D O I：
10.1007/s11082-008-9238-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A Monte Carlo (MC) simulation of excess noise in heterojunction avalanche photodetector (APD), made up of InP/InGaAs, is made. The simulation is based on the hard threshold dead space consideration in the displaced exponential model of the distribution of ionization path lengths. Impact ionization and multiplication of electrons as function of ionizing electric field are also studied. The multiplication and noise are seen to be reduced compared to those in component materials. The simulated results are seen to agree well with the reports of other theoretical predictions and experimental results published in literatures.
引用
收藏
页码：439 / 446
页数：8
相关论文
共 21 条
[11]   Noise characteristics of thin multiplication region GaAs avalanche photodiodes [J].
Hu, C ;
Anselm, KA ;
Streetman, BG ;
Campbell, JC .
APPLIED PHYSICS LETTERS, 1996, 69 (24) :3734-3736
[12]  
KELDYSH LV, 1965, SOV PHYS JETP-USSR, V21, P1135
[13]   A new look at impact ionization - Part I: A theory of gain, noise, breakdown probability, and frequency response [J].
McIntyre, RJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (08) :1623-1631
[14]   MULTIPLICATION NOISE IN UNIFORM AVALANCHE DIODES [J].
MCINTYRE, RJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :164-+
[15]   A simple model to determine multiplication and noise in avalanche photodiodes [J].
Ong, DS ;
Li, KF ;
Rees, GJ ;
David, JPR ;
Robson, PN .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (06) :3426-3428
[16]   A Monte Carlo investigation of multiplication noise in thin p+-i-n+ GaAs avalanche photodiodes [J].
Ong, DS ;
Li, KF ;
Rees, GJ ;
Dunn, GM ;
David, JPR ;
Robson, PN .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (08) :1804-1810
[17]   Avalanche multiplication in AlxGa1-xAs (x=0to0.60) [J].
Plimmer, SA ;
David, JPR ;
Grey, R ;
Rees, GJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (05) :1089-1097
[18]   SOFT-THRESHOLD LUCKY DRIFT THEORY OF IMPACT IONIZATION IN SEMICONDUCTORS [J].
RIDLEY, BK .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1987, 2 (02) :116-122
[19]   Dead-space-based theory correctly predicts excess noise factor for thin GaAs and AlGaAs avalanche photodiodes [J].
Saleh, MA ;
Hayat, MM ;
Saleh, BEA ;
Teich, MC .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (03) :625-633
[20]   NEW INGAAS-INP AVALANCHE PHOTO-DIODE STRUCTURE FOR THE 1-1.6 MU-M WAVELENGTH REGION [J].
SUSA, N ;
NAKAGOME, H ;
MIKAMI, O ;
ANDO, H ;
KANBE, H .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (08) :864-870
123