Monte Carlo simulation of excess noise in heterojunction avalanche photodetector

被引：4

作者：

Ghosh, A. ^{[1
]}

Ghosh, K. K. ^{[1
]}

机构：

[1] Ctr Sci Educ & Res, Kolkata 700094, W Bengal, India

来源：

OPTICAL AND QUANTUM ELECTRONICS | 2008年 / 40卷 / 5-6期

关键词：

Monte Carlo simulations; excess noise; heterojunction; avalanche; dead space; ionization probability;

D O I：

10.1007/s11082-008-9238-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A Monte Carlo (MC) simulation of excess noise in heterojunction avalanche photodetector (APD), made up of InP/InGaAs, is made. The simulation is based on the hard threshold dead space consideration in the displaced exponential model of the distribution of ionization path lengths. Impact ionization and multiplication of electrons as function of ionizing electric field are also studied. The multiplication and noise are seen to be reduced compared to those in component materials. The simulated results are seen to agree well with the reports of other theoretical predictions and experimental results published in literatures.

引用

页码：439 / 446

页数：8

共 21 条

[1] THE DETERMINATION OF IMPACT IONIZATION COEFFICIENTS IN (100) GALLIUM-ARSENIDE USING AVALANCHE NOISE AND PHOTOCURRENT MULTIPLICATION MEASUREMENTS [J].