Electric characteristics of ruthenium doped InP and its application for buried-heterostructure lasers

被引：4
|
作者：
Yamaguchi, Harunaka [1 ]
Nagira, Takashi [1 ]
Sakaino, Go [1 ]
Ono, Kenichi [1 ]
Takemi, Masayoshi [1 ]
机构：
[1] Mitsubishi Electr Corp, High Frequency & Opt Device Works, Itami, Hyogo 6648641, Japan
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 2 | 2012年 / 9卷 / 02期
关键词：
ruthenium; semi-insulated; InP; DFB-LD;
D O I：
10.1002/pssc.201100262
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In recent years, ruthenium (Ru) has been focused on the new semi-insulated doping material for InP instead of Fe. Semi-insulated InP is essential for the blocking layer of high modulation speed laser diode in terms of the capacitance and heat dissipation. In this paper, we have investigated the electric characteristic of Ru doped InP (Ru-InP) which works both electron and hole trap characteristics. We fabricated n-InP/Ru-InP/n-InP (n/Ru/n-InP) and p-InP/Ru-InP/p-InP (p/Ru/p-InP) structure by Metal Organic Vapor Phase Epitaxy (MOVPE), and evaluated I-V characteristics of its structure. It turned out from this experiment that the volume resistivity of p/Ru/p-InP structure was higher than that of n/Ru/n-InP. The resistivity of p/Ru/p-InP was almost equal to that of n/Fe/n-InP. We applied the Ru-InP to the Buried-Heterostructure DFB Laser as current blocking layer. We confirmed that the temperature dependence of LD characteristics was improved, and the output power was over 10mW even at 70 degrees C. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：342 / 345
页数：4
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