First-principle study of the electronic and optical properties of Ti doped ZnS

被引:1
作者
Chen, Changpeng [1 ]
Xie, Jianxiong [1 ]
Wang, Jiafu [1 ]
机构
[1] Wuhan Univ Technol, Sch Sci, Wuhan 430070, Hubei, Peoples R China
来源
FRONTIERS OF ADVANCED MATERIALS AND ENGINEERING TECHNOLOGY, PTS 1-3 | 2012年 / 430-432卷
关键词
First-principles calculation; electronic structure; optical properties; Ti doped ZnS; APPROXIMATION;
D O I
10.4028/www.scientific.net/AMR.430-432.173
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Based on the density functional pseudopotential method, the electronic structures and the optical properties for Ti doped ZnS are investigated in detail. The calculation results indicate that the coping of Ti widens the band gap of ZnS and the Fermi level shifts upward into the conduction band. The impurity elements form new highly localized impurity energy level at the bottom of the conduction band near the Fermi level.,.Meanwhile, blue shifts are revealed in both the imaginary part of dielectric function and the absorption spectra corresponding to the change of band gaps.
引用
收藏
页码:173 / 176
页数:4
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