Surface smoothing of single-crystal diamond (100) substrate by polishing technique

被引:41
|
作者
Kubota, Akihisa [1 ]
Fukuyama, Sakae [1 ]
Ichimori, Yuya [1 ]
Touge, Mutsumi [1 ]
机构
[1] Kumamoto Univ, Grad Sch Sci & Technol, Dept Mech Syst Engn, Kumamoto 8608555, Japan
关键词
Diamond crystal; Polishing; Planarization; HYDROGEN PLASMA; FILMS; PLANARIZATION; IRRADIATION; KNO3;
D O I
10.1016/j.diamond.2011.10.022
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this study, we investigated the possibility of removing and smoothing a single-crystal diamond (100) substrate by our proposed polishing method utilizing hydroxyl radicals (OH radicals) generated on an Fe surface in hydrogen peroxide solution. To demonstrate the feasibility of removing a diamond surface, an Fe rod and a diamond substrate were rubbed together in hydrogen peroxide solution, then the area on the diamond surface that had come into contact with the Fe rod was observed in detail. Moreover, we attempted to planarize the diamond surface by our proposed method. The surface roughness was measured and evaluated by phase-shift interferometric microscopy and atomic force microscopy. The results show that the surface roughness on a diamond substrate is markedly improved from 2.24 nm Ra to 0.16 nm Ra after 10 h polishing. These results offer useful information for the precise smoothing of single-crystal diamond substrates. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:59 / 62
页数:4
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