Threshold resistive and capacitive switching behavior in binary amorphous GeSe

被引：36

作者：

Jeong, Doo Seok ^{[1
]}

Lim, Hyungkwang ^{[1
,2
,3
]}

Park, Goon-Ho ^{[1
]}

Hwang, Cheol Seong ^{[2
,3
]}

Lee, Suyoun ^{[1
]}

Cheong, Byung-ki ^{[1
]}

机构：

[1] Korea Inst Sci & Technol, Elect Mat Res Ctr, Seoul 136791, South Korea

[2] Seoul Natl Univ, Dept Mat Sci & Engn, WCU Hybrid Mat Program, Seoul 151744, South Korea

[3] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151744, South Korea

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 111卷 / 10期

关键词：

CHEMICAL-VAPOR; ATOMIC LAYER; MECHANISM; GROWTH; FILMS;

D O I：

10.1063/1.4714705

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A threshold switching (TS) event in a binary amorphous GeSe film placed between Pt top and bottom electrodes was examined. This GeSe film exhibits fast (<40 ns) TS behavior. The observed TS of the resistance was found to be accompanied with the TS of the capacitance. A mechanism for the TS of the GeSe film was suggested by revisiting the previous controversy about the thermal versus non-thermal electronic mechanism. The non-thermal electronic mechanism envisaging the double-injection of electronic carriers can qualitatively account for the measured threshold resistive and capacitive switching, whereas the TS behavior simulated using the thermal mechanism is inconsistent with the experimental observation. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4714705]

引用

页数：8

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