Crossover from Spin Accumulation into Interface States to Spin Injection in the Germanium Conduction Band

被引：79
作者：
Jain, A. [1 ]
Rojas-Sanchez, J. -C.
Cubukcu, M.
Peiro, J.
Le Breton, J. C.
Prestat, E.
Vergnaud, C.
Louahadj, L.
Portemont, C.
Ducruet, C.
Baltz, V.
Barski, A.
Bayle-Guillemaud, P.
Vila, L.
Attane, J. -P.
Augendre, E.
Desfonds, G.
Gambarelli, S.
Jaffres, H.
George, J. -M.
Jamet, M.
机构：
[1] INAC SP2M, F-38054 Grenoble, France
[2] Univ Grenoble 1, F-38054 Grenoble, France
[3] Ctr Natl Rech Sci Thales, Unite Mixte Phys, F-91767 Palaiseau, France
[4] CROCUS Technol, F-38025 Grenoble, France
[5] Univ Grenoble 1, Ctr Natl Rech Sci, INAC Spintec, F-38054 Grenoble, France
[6] Inst Polytechn Grenoble, F-38054 Grenoble, France
[7] LETI, F-38054 Grenoble, France
[8] INAC SCIB, F-38054 Grenoble, France
来源：
PHYSICAL REVIEW LETTERS | 2012年 / 109卷 / 10期
关键词：
ROOM-TEMPERATURE; SILICON; SPINTRONICS;
D O I：
10.1103/PhysRevLett.109.106603
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in the spin injection mechanism from a magnetic tunnel junction into a semiconductor is still under debate. In this Letter, we demonstrate a clear transition from spin accumulation into interface states to spin injection in the conduction band of n-Ge. We observe spin signal amplification at low temperature due to spin accumulation into interface states followed by a clear transition towards spin injection in the conduction band from 200 K up to room temperature. In this regime, the spin signal is reduced to a value compatible with the spin diffusion model. More interestingly, the observation in this regime of inverse spin Hall effect in germanium generated by spin pumping and the modulation of the spin signal by a gate voltage clearly demonstrate spin accumulation in the germanium conduction band.
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页数：5
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