Reactive radio frequency sputtering deposition and characterization of zinc nitride and oxynitride thin films

被引：16

作者：

Jiang, Nanke ^{[1
]}

Georgiev, Daniel G. ^{[1
]}

Wen, Ting ^{[2
]}

Jayatissa, Ahalapitiya H. ^{[2
]}

机构：

[1] Univ Toledo, Dept Elect Engn & Comp Sci, Toledo, OH 43606 USA

[2] Univ Toledo, Dept Mech Ind & Mfg Engn, Toledo, OH 43606 USA

来源：

THIN SOLID FILMS | 2012年 / 520卷 / 06期

基金：

美国国家科学基金会;

关键词：

Zinc nitride; Zinc oxynitride; Reactive radio-frequency sputtering; X-ray diffraction; Scanning electron microscopy; Electron diffraction spectroscopy; Raman spectroscopy; Hall effect measurements; OPTICAL BAND-GAP; ZNO; ZN3N2; NITROGEN; DEFECTS; ENERGY; PHOTOLUMINESCENCE; CONVERSION; OXIDATION; TARGET;

D O I：

10.1016/j.tsf.2011.08.038

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Zinc nitride films were deposited on glass or silicon substrates by reactive magnetron radio frequency sputtering of zinc in either N-2-Ar or N-2-Ar-O-2 ambient. The effects of varying the nitrogen contents and the substrate temperature were investigated. X-ray diffraction data showed that the as-deposited films contain the zinc nitride cubic crystalline phase with a preferred orientation, and Raman scattering measurements revealed Zn-N related modes. According to energy-dispersive X-ray spectroscopy analysis, the as-deposited films were nitrogen-rich and contained only a small fraction of oxygen. Hall-effect measurements showed that p-type zinc nitride with carrier concentration of similar to 10(19) cm(-3), mobility of similar to 10(1) cm(2)/Vs, resistivity of similar to 10(-2) Omega*cm, was obtained. The photon energy dependence of optical transmittance suggested that the material has an indirect bandgap. (c) 2011 Elsevier B.V. All rights reserved.

引用

页码：1698 / 1704

页数：7

共 50 条

[1] Sputtering deposition and characterization of zirconium nitride and oxynitride films
Rizzo, A.
Signore, M. A.
Mirenghi, L.
Tapfer, L.
Piscopiello, E.
Salernitano, E.
Giorgi, R.
THIN SOLID FILMS, 2012, 520 (09) : 3532 - 3538
[2] Deposition and characterization of AlN thin films obtained by radio frequency reactive magnetron sputtering
Pelegrini, M. V.
Alvarado, M. A.
Alayo, M. I.
Pereyra, I.
CANADIAN JOURNAL OF PHYSICS, 2014, 92 (7-8) : 940 - 942
[3] Characterization of zirconium oxynitride films obtained by radio frequency magnetron reactive sputtering
Signore, M. A.
Rizzo, A.
Mirenghi, L.
Tagliente, M. A.
Cappello, A.
THIN SOLID FILMS, 2007, 515 (17) : 6798 - 6804
[4] Dielectric oxynitride LaTiOxNy thin films deposited by reactive radio-frequency sputtering
Ziani, A.
Le Paven-Thivet, C.
Fasquelle, D.
Le Gendre, L.
Benzerga, R.
Tessier, F.
Chevire, F.
Carru, J. C.
Sharaiha, A.
THIN SOLID FILMS, 2012, 520 (14) : 4536 - 4540
[5] STUDY ON RADIO-FREQUENCY REACTIVE SPUTTERING DEPOSITION OF SILICON-NITRIDE THIN-FILMS
STEDILE, FC
BAUMVOL, IJR
SCHREINER, WH
FREIRE, FL
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (03): : 462 - 467
[6] Tin nitride thin films prepared by radio-frequency reactive sputtering
1600, American Inst of Physics, Woodbury, NY, USA (77):
[7] Deposition of magnesium hydride thin films using radio frequency reactive sputtering
Platzer-Bjorkman, C.
Mongstad, T.
Maehlen, J. P.
Baldi, A.
Karazhanov, S.
Holt, A.
THIN SOLID FILMS, 2011, 519 (18) : 5949 - 5954
[8] Copper nitride thin films prepared by reactive radio-frequency magnetron sputtering
Nosaka, T
Yoshitake, M
Okamoto, A
Ogawa, S
Nakayama, Y
THIN SOLID FILMS, 1999, 348 (1-2) : 8 - 13
[9] Spectra characterization of silicon carbonitride thin films by reactive radio frequency sputtering
Peng, XF
Song, LX
Le, J
Hu, XF
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (01): : 159 - 163
[10] Growth of polycrystalline zinc phosphide thin films by reactive radio frequency magnetron sputtering
Sharma, M.
Mushrush, M.
Wright, R. J.
Shinkel, N.
Sprague, S.
Rozeveld, S.
Woodward, M.
Kearns, K.
Small, P.
Todd, C.
THIN SOLID FILMS, 2015, 591 : 32 - 38

← 1 2 3 4 5 →